Channel conduction in semiconductor devices

An apparatus, comprising:

• an isolation trench formed in a semiconductor material, wherein the isolation trench includes:
• a first dielectric material;
• and
• a second dielectric material formed on the first dielectric material, wherein:
• the second dielectric material has a negative bias relative to a channel bias to an active area of an adjacent access device;
• the second dielectric material is a different material than the first dielectric material;
• the second dielectric material is deposited in a bottom portion of the isolation trench;
• and
• a height of the second dielectric material in the isolation trench rises above a bottom portion of a channel of the adjacent access device, wherein the isolation trench is formed to a depth in the semiconductor material that is greater than a depth to which the adjacent access device was formed in the semiconductor material;
• a passing access line material formed on the second dielectric material;
• a third dielectric material formed on the passing access line material, wherein the third dielectric material is a sacrificial material;
• and
• a fourth dielectric material.

An apparatus, comprising:

• an access device having a first source/drain region and a second source/drain region in a substrate, wherein the first source/drain region and the second source/drain region are separated by a channel;
• and
• an isolation trench neighboring the channel and the access device, wherein the isolation trench is formed by:
• etching an opening in a substrate structure;
• conformally depositing a first dielectric material into the opening;
• depositing a second dielectric material on the first dielectric material in the opening, wherein:
• the second dielectric material has a conductive bias opposite a conductive bias of the channel;
• the second dielectric material is a different material than the first dielectric material;
• the second dielectric material is deposited in a bottom portion of the isolation trench;
• and
• a height of the second dielectric material in the isolation trench rises above a bottom portion of the channel by 10%-20% of a total height of an active area of the access device, wherein the isolation trench is formed to a depth in the substrate structure that is greater than a depth to which the access device was formed in a semiconductor material;
• and
• depositing a passing access line material on the second dielectric material;
• depositing a third dielectric material on the passing access line material in the opening, wherein the third dielectric material is a sacrificial dielectric material;
• removing portions of the third dielectric material using a selective dry etch process;
• and
• recessing the second dielectric material in the opening using a wet etch process.