MFM capacitor with multilayered oxides and metals and processes for forming such

A capacitor, comprising:

• an intermediate dielectric layer;
• a first metal layer in a space in the intermediate dielectric layer;
• a second metal layer on the first metal layer, the second metal layer including a first non-reactive barrier metal;
• a ferroelectric layer on the second metal layer and extending onto a top surface of the intermediate dielectric layer;
• a third metal layer on the ferroelectric layer, the third metal layer including a second non-reactive barrier metal;
• a fourth metal layer on the third metal layer, wherein the ferroelectric layer extends laterally beyond the third metal layer and the fourth metal layer, and wherein the ferroelectric layer has an uppermost surface at a same level as an uppermost surface of the third metal layer and the fourth metal layer;
• and
• a top dielectric layer above an upper surface of the ferroelectric layer and a bottom dielectric layer below the intermediate dielectric layer.

A system, comprising:

• one or more processing components;
• and
• one or more data storage components, the data storage components including at least one capacitor, the at least one capacitor including:
• a first metal layer;
• a second metal layer on the first metal layer, the second metal layer including a first non-reactive barrier metal;
• a ferroelectric layer on the second metal layer;
• a third metal layer on the ferroelectric layer, the third metal layer including a second non-reactive barrier metal;
• and
• a fourth metal layer on the third metal layer, wherein the ferroelectric layer extends laterally beyond the third metal layer and the fourth metal layer, and wherein the ferroelectric layer has an uppermost surface at a same level as an uppermost surface of the third metal layer and the fourth metal layer.

A method, comprising:

• forming a first dielectric layer;
• forming a metal via in the first dielectric layer;
• forming a second dielectric layer;
• forming a first space in the second dielectric layer;
• forming a first metal layer in the first space;
• forming a first non-reactive barrier layer on the first metal layer;
• forming a ferroelectric layer on the first non-reactive barrier layer;
• forming a second non-reactive barrier layer on the ferroelectric layer;
• and
• forming a second metal layer on the second non-reactive barrier layer, wherein the ferroelectric layer extends laterally beyond the second non-reactive barrier layer and the second metal layer, and wherein the ferroelectric layer has an uppermost surface at a same level as an uppermost surface of the second non-reactive barrier layer and the second metal layer.