Backside illuminated global shutter image sensor

An image sensor, comprising:

• a photodetector disposed in a substrate;
• a storage node disposed in the substrate and spaced from the photodetector, wherein the storage node is spaced from a first side of the substrate by a first distance;
• a reset gate disposed over the first side of the substrate;
• a vertical transfer gate extending into the substrate from the first side of the substrate, wherein a portion of the vertical transfer gate is disposed at least partially over the first side of the substrate, and wherein the vertical transfer gate is configured to selectively form a first conductive channel between the photodetector and the storage node;
• and
• an isolation structure disposed in the substrate and between the photodetector and the storage node, wherein the isolation structure extends into the substrate from a second side of the substrate opposite the first side of the substrate, and wherein the isolation structure is spaced from the first side of the substrate by a second distance less than the first distance.

An image sensor, comprising:

• a photodetector disposed in a substrate;
• an interlayer dielectric (ILD) structure disposed on a first side of the substrate;
• a storage node disposed in the substrate and spaced from the photodetector;
• a floating diffusion node disposed in the substrate and spaced from both the photodetector and the storage node;
• a first vertical transfer gate disposed on the first side of the substrate and at least partially between the photodetector and the storage node, wherein a portion of the first vertical transfer gate extends vertically into the substrate, and wherein the first vertical transfer gate is configured to selectively form a first conductive channel between the photodetector and the storage node;
• and
• a second vertical transfer gate disposed on the first side of the substrate and laterally spaced from the first vertical transfer gate, wherein the second vertical transfer gate is disposed at least partially between the storage node and the floating diffusion node, wherein a portion of the second vertical transfer gate extends vertically into the substrate, and wherein the second vertical transfer gate is configured to selectively form a second conductive channel between the storage node and the floating diffusion node.