FinFET device having flat-top epitaxial features and method of making the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Jing Lee, Li-Wei Chou, Ming-Hua Yu
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Abstract
A semiconductor device and method of forming the same are disclosed. The semiconductor device includes a substrate, an isolation structure over the substrate, a fin extending from the substrate, and an epitaxial feature over the fin. The epitaxial feature comprises a lower portion and an upper portion. The lower portion extends from the fin and extends above the isolation structure. The upper portion is over the lower portion. The upper portion extends partially through the lower portion in a cross section perpendicular to a lengthwise direction of the fin.
Claims20
A semiconductor device, comprising:
- a substrate;
- an isolation structure over the substrate;
- a fin extending from the substrate;
- and
- an epitaxial feature over the fin,
- wherein:
- the epitaxial feature comprises a lower portion and an upper portion;
- the lower portion extends from the fin and extends above the isolation structure;
- the upper portion is over the lower portion;
- and
- the upper portion extends partially through the lower portion in a cross section perpendicular to a lengthwise direction of the fin.
A semiconductor device, comprising:
- a substrate;
- first and second fins protruding from the substrate;
- an epitaxial feature over the first and second fins;
- a first set of dielectric features on opposing sides of the first fin;
- and
- a second set of dielectric features on opposing sides of the second fin,
- wherein:
- the epitaxial feature comprises first and second lower portions and an upper portion;
- the first lower portion extends from the first fin and between the first set of dielectric features;
- the second lower portion extends from the second fin and between the second set of dielectric features;
- the upper portion is over the first and second lower portions;
- and
- the upper portion extends partially through each of the first and second lower portions in a cross-section perpendicular to a lengthwise direction of the first and second fins.
A semiconductor device, comprising:
- a substrate;
- first and second fins protruding from the substrate;
- a first epitaxial feature over the first fin, wherein the first epitaxial feature comprises a first lower portion and a first upper portion with different dopant concentrations, wherein the first upper portion extends partially through the first lower portion in a cross section perpendicular to a lengthwise direction of the first fin;
- a second epitaxial feature over the second fin, wherein the second epitaxial feature comprises a second lower portion and a second upper portion with different dopant concentrations;
- and
- a conductive feature interfacing a top surface of the first upper portion and a top surface of the second upper portion, wherein the top surface of the first upper portion is flat and the top surface of the second upper portion is slanted.
Dependencies are inferred from the claim text.