Methods of forming a semiconductor device having an air spacer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Lien Huang, Che-Ming Hsu, Ching-Feng Fu, Huan-Just Lin
Life of this patent
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Abstract
A semiconductor device includes a substrate, a semiconductor fin, a shallow trench isolation (STI) structure, an air spacer, and a gate structure. The semiconductor fin extends upwardly from the substrate. The STI structure laterally surrounds a lower portion of the semiconductor fin. The air spacer is interposed the STI structure and the semiconductor fin. The gate structure extends across the semiconductor fin.
Claims20
A method for forming a semiconductor device, comprising:
- forming a metal via in a first dielectric layer;
- forming a second dielectric layer over the metal via;
- forming a metal line extending in the second dielectric layer and across the metal via;
- removing a portion of the metal line to form a trench that exposes the first dielectric layer;
- forming a sacrificial spacer lining the trench;
- forming a dielectric spacer lining sidewalls of the sacrificial spacer;
- after forming the dielectric spacer, removing the sacrificial spacer to form an air spacer;
- and
- depositing a dielectric material in the trench and sealing the air spacer.
A method for forming a semiconductor device, comprising:
- forming a dielectric layer over a substrate;
- forming a metal line laterally extending in the dielectric layer;
- performing a first etching process on the metal line and the dielectric layer to form an opening that breaks the metal line into a first metal line pattern and a second metal line pattern;
- forming a sacrificial spacer on a sidewall of the opening;
- forming a dielectric spacer on the sacrificial spacer;
- after forming the dielectric spacer, removing the sacrificial spacer to form an air spacer;
- and
- depositing a dielectric material in the opening while leaving the air spacer unfilled.
A method for forming a semiconductor device, comprising:
- forming a dielectric layer over a substrate;
- forming a metal line in the dielectric layer;
- patterning the metal line to form a first metal line pattern and a second metal line pattern spaced apart from the first metal line pattern by an opening exposing the dielectric layer;
- forming a dielectric spacer extending upwardly from the dielectric layer in the opening and spaced apart from the dielectric layer by an air spacer in the opening, the dielectric spacer having a top view ring pattern;
- forming a dielectric material in the opening, wherein the dielectric spacer laterally surrounds the dielectric material;
- and
- forming a dielectric sealer sealing a top end of the air spacer.
Dependencies are inferred from the claim text.