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US 11,769,768 B2Granted
Methods for pillar connection on frontside and passive device integration on backside of die
AssigneeWolfspeed, Inc.
InventorsTerry Alcorn, Daniel Namishia, Fabian Radulescu
Life of this patent
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Abstract
An integrated circuit device includes a radio frequency transistor amplifier die having a first surface, a second surface, a semiconductor layer structure that is between the first and second surfaces and includes a plurality of transistor cells adjacent the first surface, and terminals coupled to the transistor cells. At least one passive electronic component is provided on the second surface of the die and is electrically connected to at least one of the terminals, for example, by at least one conductive via. One or more conductive pillar structures may protrude from the first surface of the die to provide electrical connections to one or more of the terminals.
Claims32
An integrated circuit device, comprising:
- a radio frequency (“RF”) transistor amplifier die comprising a first surface, a second surface, a semiconductor layer structure that is between the first and second surfaces and comprises a plurality of transistor cells adjacent the first surface, and terminals coupled to the transistor cells;
- and
- at least one passive electronic component on the second surface of the die and electrically connected to at least one of the terminals, wherein the at least one passive electronic component provides at least a portion of an input impedance matching circuit, an output impedance matching circuit, and/or harmonic termination circuit for an RF transistor amplifier that is defined by the transistor cells.
An integrated circuit device, comprising:
- a radio frequency (“RF”) transistor amplifier die comprising a first surface, a second surface, a semiconductor layer structure that is between the first and second surfaces and comprises a plurality of transistor cells adjacent the first surface, and terminals coupled to the transistor cells;
- at least one passive electronic component on the second surface of the die and electrically connected to at least one of the terminals;
- and
- a metal layer extending on the second surface of the die electrically connecting the at least one passive electronic component to the at least one of the terminals.
1 more element
An integrated circuit device, comprising:
- a radio frequency (“RF”) transistor amplifier die comprising a first surface, a second surface, a semiconductor layer structure that is between the first and second surfaces and comprises a plurality of transistor cells adjacent the first surface, and terminals coupled to the transistor cells;
- and
- at least one passive electronic component on the second surface of the die and electrically connected to at least one of the terminals,
- wherein the semiconductor layer structure comprises a Group-III nitride material, and the die comprises a silicon carbide substrate between the Group-III nitride material and the second surface.
1 more element
An integrated circuit device, comprising:
- a radio frequency (“RF”) transistor amplifier die comprising a first surface, a second surface, a semiconductor layer structure that is between the first and second surfaces and comprises a plurality of transistor cells adjacent the first surface, and terminals coupled to the transistor cells;
- at least one passive electronic component on the second surface of the die and electrically connected to at least one of the terminals;
- and
- one or more conductive pillar structures that protrude from the first surface of the die and provide electrical connections to one or more of the terminals.
1 more element
An integrated circuit device, comprising:
- a radio frequency (“RF”) transistor amplifier die comprising a first surface, a second surface, a semiconductor layer structure that is between the first and second surfaces and comprises a plurality of transistor cells adjacent the first surface, and terminals coupled to the transistor cells;
- one or more conductive pillar structures that protrude from the first surface of the die and are electrically connected to one or more of the terminals;
- and
- at least one conductive via that extends into the second surface of the die and the semiconductor layer structure and is electrically connected to at least one of the terminals.
1 more element
A method of fabricating an integrated circuit device, the method comprising:
- forming a radio frequency (“RF”) transistor amplifier structure comprising a first surface, a second surface, a semiconductor layer structure that is between the first and second surfaces and comprises a plurality of transistor cells adjacent the first surface, a substrate between the semiconductor layer structure and the second surface, and terminals coupled to the transistor cells;
- forming one or more conductive pillar structures that protrude from the first surface to provide electrical connections to one or more of the terminals;
- and
- singulating the RF transistor amplifier structure to define a RF transistor amplifier die comprising a portion of the substrate having a thickness of about 50 to about 200 microns or more.
1 more element
A method of fabricating an integrated circuit device, the method comprising:
- forming a radio frequency (“RF”) transistor amplifier structure comprising a first surface, a second surface, a semiconductor layer structure that is between the first and second surfaces and comprises a plurality of transistor cells adjacent the first surface, and terminals coupled to the transistor cells;
- forming one or more conductive pillar structures that protrude from the first surface to provide electrical connections to one or more of the terminals;
- and
- forming at least one conductive via that extends into the second surface and through the semiconductor layer structure to provide electrical connection to at least one of the terminals.
1 more element
Dependencies are inferred from the claim text.