Organic interposer including a dual-layer inductor structure and methods of forming the same

A semiconductor structure comprising an organic interposer, the organic interposer comprising:

• interconnect-level dielectric material layers embedding redistribution interconnect structures;
• a metal structure comprising copper and vertically extending through a layer stack including from bottom to top, the interconnect-level dielectric layer, a dielectric capping layer, and a bonding-level dielectric layer, wherein the metal structure comprises a conductive via structure comprising a combination of a first portion of a metal seed layer and a first copper portion that is laterally surrounded by the first portion of the metal seed layer;
• and
• a first bump structure overlying the bonding-level dielectric layer, contacting a first segment of a top surface of the metal structure, and having an areal overlap with the first plurality of line segments in a plan view.

A method of forming an organic interposer, comprising:

• forming interconnect-level dielectric material layers embedding redistribution interconnect structures and a lower metal line structure over a carrier substrate;
• forming a dielectric capping layer over the lower metal line structure;
• forming a via cavity over the lower metal line structure through the dielectric capping layer, wherein;
• forming a continuous conductive structure comprising copper in the via cavity and over a horizontal plane including a topmost surface of the dielectric capping layer, wherein the continuous conductive structure comprises a conductive via structure vertically extending through the dielectric capping layer and contacting the lower metal line structure, and an upper metal line structure overlying the horizontal plane including the topmost surface of the dielectric capping layer, wherein a combination of the lower metal line structure, the conductive via structure, and the upper metal line structure comprises a dual-layer metal structure;
• and
• forming at least one bump structure on the dual-layer metal structure, wherein the at least one bump structure is formed entirely above the horizontal plane including the topmost surface of the dielectric capping layer.