Integrated circuit (IC) with reconstituted die interposer for improved connectivity, and related methods of fabrication
AssigneeQUALCOMM Incorporated
InventorsJonghae Kim, Aniket Patil
Life of this patent
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Abstract
An integrated circuit (IC) with reconstituted die interposer for improved connectivity has at least one device or component mounted on an exterior upper surface that couples to a die in an interposer layer within the package. The interposer layer may have interconnect structures, where a first interconnect structure has vias of a first pitch and a second interconnect structure has vias of a second pitch greater than the first pitch. In this manner, the interposer layer acts as a device that can allow conductive coupling for other devices with those pitches to support interconnections between those devices and other devices within the interposer layer.
Claims20
An integrated circuit (IC) package, comprising:
- an interposer layer comprising:
- a first modular interconnect structure comprising a first plurality of vias having a first pitch configured to couple to a high-bandwidth memory component comprising over two thousand input/outputs (I/Os);
- a second modular interconnect structure comprising a second plurality of vias having a second pitch greater than the first pitch configured to be coupled to a second component comprising a low speed memory component;
- and
- a mold material positioned between the first modular interconnect structure and the second modular interconnect structure.
A method of fabricating an integrated circuit (IC) package, comprising:
- forming a metallization layer comprising a first side and a second side;
- forming an interposer layer adjacent to the first side of the metallization layer, the interposer layer comprising:
- at least one IC die;
- a first modular interconnect structure comprising a first plurality of vias having a first pitch configured to be coupled to a high-bandwidth memory component;
- a second modular interconnect structure comprising a second plurality of vias having a second pitch, wherein the second pitch is greater than the first pitch;
- and
- a mold material positioned between the first modular interconnect structure and the second modular interconnect structure;
- and
- forming the high-bandwidth memory component adjacent to the interposer layer and coupled to the at least one IC die through the first modular interconnect structure.
Dependencies are inferred from the claim text.