Semiconductor device and method of providing high density component spacing

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming a first conductive post over the substrate;
• forming a second conductive post over the substrate;
• forming a third conductive post over the substrate;
• forming a fourth conductive post over the substrate;
• depositing a flux material over a top surface of the first conductive post, second conductive post, third conductive post, and fourth conductive post;
• disposing a first electrical component over the flux material on the first conductive post and second conductive post;
• disposing a second electrical component over the flux material on the third conductive post and fourth conductive post less than 50 micrometers from the first electrical component;
• and
• reflowing the flux material to make electrical connection between the first electrical component and the first conductive post and second conductive post and further to make electrical connection between the second electrical component and the third conductive post and fourth conductive post while avoiding contact between the first electrical component and second electrical component.

A semiconductor device, comprising:

• a substrate;
• a first conductive post formed over the substrate;
• a second conductive post formed over the substrate;
• a third conductive post formed over the substrate;
• a fourth conductive post formed over the substrate;
• a flux material deposited in contact with a top surface of the first conductive post, second conductive post, third conductive post, and fourth conductive post;
• a first electrical component disposed over the flux material on the first conductive post and second conductive post;
• and
• a second electrical component disposed over the flux material on the third conductive post and fourth conductive post with a spacing between the first electrical component and second electrical component being less than 50 micrometers, wherein the flux material maintains position of the first electrical component and second electrical component to avoid contact between the first electrical component and second electrical component.

A semiconductor device, comprising:

• a substrate;
• a first conductive post formed over the substrate;
• a second conductive post formed over the substrate;
• a third conductive post formed over the substrate;
• a fourth conductive post formed over the substrate;
• a flux material deposited over a top surface of the first conductive post, second conductive post, third conductive post, and fourth conductive post;
• a first electrical component disposed over the flux material on the first conductive post and second conductive post;
• and
• a second electrical component disposed over the flux material on the third conductive post and fourth conductive post less than 50 micrometers from the first electrical component, wherein the flux material maintains position of the first electrical component and second electrical component to avoid contact between the first electrical component and second electrical component.