Back to results
US 11,769,729 B2Granted
Metal structures, devices, and methods
AssigneeIntel Corporation
InventorsDaniel J. Zierath, Michael McSwiney, Jason Farmer, Akm Shaestagir Chowdhury
Life of this patent
Estimating the term…
Abstract
Provided herein are metal structures that may include a cobalt alloy, a nickel alloy, or nickel, as well as related devices and methods. The metal structures may be formed by chemical vapor deposition (CVD), and may include trace amounts of precursor materials used during the CVD process.
Claims20
A metal structure, comprising:
- A wherein A includes:
- b weight-percent of Co;
- q weight-percent of Q;
- and
- z weight-percent of Z;
- wherein a sum of b, q, and z equals 100%;
- b is between 50% and 99.99%;
- q is between 0.01% and 50%;
- z is greater than 0.01% and not greater than 1%;
- Q is selected from Ni, Al, Mn, Si, Cr, V, Nb, or Ta;
- and Z is selected from Mo or W.
8 more elements
An integrated circuit (IC) die, comprising:
- a metal interconnect, including:
- a compound according to formula (I)—
- CobQqZz (formula(I));
- wherein b, q, and z are weight percentages based on a total weight of the compound according to formula (I), b is between 50% and 99.99%, q is between 0.01% and 50%, and z is greater than 0.01% and not greater than 1%;
- wherein Q is selected from Ni, Al, Mn, Si, Cr, V, Nb, or Ta;
- wherein Z is selected from Mo or W.
3 more elements
A metal structure, comprising:
- A wherein A includes:
- b weight-percent of Co;
- q weight-percent of Q;
- and
- z weight-percent of Z;
- wherein a sum of b, q, and z equals 100%;
- b is between 50% and 99.99%;
- q is between 0.01% and 50%;
- z is greater than 0% and less than 49.9%;
- Q is selected from Ni, Al, Mn, Si, Cr, V, Nb, or Ta;
- Z is selected from Mo or W;
- and A has a greater melting point than a melting point of Co.
9 more elements
Dependencies are inferred from the claim text.