Semiconductor device and methods of forming the same

A semiconductor device, comprising:

• a frame having a cavity partially defined by an inner sidewall of the frame and at least one channel disposed at a bottom of the frame and extending from the inner sidewall to an outer sidewall of the frame;
• and
• a die disposed on the frame and comprising a substrate, an interconnection structure disposed over the substrate, and a passivation layer disposed over the interconnection structure, wherein the substrate faces the frame, and a through hole penetrates through the passivation layer, the interconnection structure and the substrate;
• wherein the through hole, the cavity and the channel are in spatial communication with each other.

A semiconductor device, comprising:

• a frame having a cavity partially defined by an inner sidewall of the frame and a channel disposed at a bottom of the frame and extending from the inner sidewall to an outer sidewall of the frame;
• and
• a die, disposed on the frame, wherein the die has a through hole penetrating through the die and spatially connected to the cavity and the channel of the frame,
• wherein the frame has a first bottom surface and a second bottom surface higher than the first bottom surface, the second bottom surface of the frame at least partially define the channel, and the channel laterally penetrates through the frame.