Semiconductor device with semiconductor chip mounted on die pad and leads of lead frame

A semiconductor device comprising:

• a bed having a bed surface;
• a semiconductor chip having a bottom surface larger than the bed surface, the semiconductor chip being provided such that a center of the bottom surface is disposed above the bed surface and the bottom surface having a first end and a second end;
• a joint material provided between the bed surface and the bottom surface;
• a plate-like first wire having a first surface and provided such that the first surface faces the first end;
• a plate-like second wire having a second surface and provided such that the second surface faces the second end;
• a first insulating film having a third surface and a fourth surface provided on an opposite side of the third surface, the third surface being in contact with the first end, the fourth surface being in contact with the first surface;
• and
• a second insulating film having a fifth surface and a sixth surface provided on an opposite side of the fifth surface, the fifth surface being in contact with the second end, the sixth surface being in contact with the first surface,
• wherein the first insulating film and the second insulating film include solder resist.

A semiconductor device comprising:

• a bed having a bed surface;
• a semiconductor chip having a bottom surface larger than the bed surface, the semiconductor chip being provided such that a center of the bottom surface is disposed above the bed surface and the bottom surface having a first end and a second end;
• a joint material provided between the bed surface and the bottom surface;
• a plate-like first wire having a first surface and provided such that the first surface faces the first end;
• a plate-like second wire having a second surface and provided such that the second surface faces the second end;
• a first insulating film having a third surface and a fourth surface provided on an opposite side of the third surface, the third surface being in contact with the first end, the fourth surface being in contact with the first surface;
• and
• a second insulating film having a fifth surface and a sixth surface provided on an opposite side of the fifth surface, the fifth surface being in contact with the second end, the sixth surface being in contact with the first surface,
• wherein a film thickness of the first insulating film and a film thickness of the second insulating film are 25 μm or more.