Semiconductor structure and fabrication method thereof

A semiconductor structure, comprising:

• a fin heat-dissipation region on a substrate, the substrate including a base substrate and a fin substrate on the base substrate, and the fin heat-dissipation region surrounding and completely covering a top surface of the fin substrate and side surfaces of the fin substrate;
• a fin channel part on the fin heat-dissipation region, wherein a width of the fin channel part is smaller than a width of the fin heat-dissipation region;
• and
• an isolation structure on the substrate, wherein a top surface of the isolation structure is coplanar with a top surface of the fin heat-dissipation region, and a bottom surface of the isolation structure is coplanar with a bottom surface of the fin heat-dissipation region, coplanar with a top surface of the base substrate, and lower than the topmost surface of the fin substrate.