Semiconductor structure having an anti-arcing pattern disposed on a passivation layer and a post passivation layer disposed on the anti-arcing pattern

A structure, comprising:

• a first semiconductor die laterally encapsulated by a first encapsulation portion;
• a second semiconductor die laterally encapsulated by a second encapsulation portion;
• at least one bonding structure between the first semiconductor die and the second semiconductor die, the second semiconductor die being electrically connected to the first semiconductor die through the at least one bonding structure, the at least one bonding structure comprising a first bonding structure disposed between the first semiconductor die and the second semiconductor die, the first bonding structure comprising a first dielectric layer and first conductors embedded in the first dielectric layer;
• and a second bonding structure disposed between the first bonding structure and the second semiconductor die, the second bonding structure comprising a second dielectric layer and second conductors embedded in the second dielectric layer, wherein the first semiconductor die is electrically connected to the second semiconductor die through the first conductors and the second conductors, and the second encapsulation portion is in contact with the first bonding structure and the second bonding structure;
• a passivation layer disposed over a top surface of the second semiconductor die and the second encapsulation portion;
• an anti-arcing pattern disposed over the passivation layer;
• a post passivation layer disposed over the passivation layer to cover the anti-arcing pattern;
• and
• conductive terminals over the second semiconductor die, wherein the conductive terminals are electrically connected to the second semiconductor die.

A structure, comprising:

• a first semiconductor die laterally encapsulated by a first encapsulation portion;
• a second semiconductor die laterally encapsulated by a second encapsulation portion;
• a first bonding structure disposed between the first semiconductor die and the second semiconductor die, the first bonding structure comprising a first dielectric layer and first conductors embedded in the first dielectric layer;
• a second bonding structure disposed between the first bonding structure and the second semiconductor die, the second bonding structure comprising a second dielectric layer and second conductors embedded in the second dielectric layer, wherein the first semiconductor die is electrically connected to the second semiconductor die through the first conductors and the second conductors, and sidewalls of the first bonding structure and sidewalls of the second bonding structure are laterally offset;
• a passivation layer disposed over a top surface of the second semiconductor die and the second encapsulation portion;
• an anti-arcing pattern disposed over the passivation layer;
• a post passivation layer disposed over the passivation layer to cover the anti-arcing pattern;
• and
• conductive terminals over the second semiconductor die, wherein the conductive terminals are electrically connected to the second semiconductor die.