Semiconductor device and method of fabricating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJia-Chuan You, Chia-Hao Chang, Wai-Yi Lien, Yu-Ming Lin
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Abstract
A device includes a substrate, a first metal feature over the substrate, first and second spacers, a first dielectric layer, and a second metal feature. The first and second spacers are on opposite sidewalls of the conductive feature, respectively. The first dielectric layer is in contact with the first spacer, in which a top surface of the protection layer is higher than a top surface of the first spacer. The second metal feature is electrically connected to the first metal structure and in contact with a top surface and a sidewall of the protection layer.
Claims20
A device, comprising:
- a substrate;
- a source/drain region over the substrate;
- a metal gate structure over the substrate and adjacent the source/drain region;
- a first metal feature over the substrate and electrically connected to the source/drain region;
- first and second spacers on opposite sidewalls of the first metal feature, respectively;
- a dielectric hard mask over the first metal feature and in contact with the second spacer, wherein the dielectric hard mask forms an interface with the first metal feature at a position higher than a bottom surface of the second spacer;
- a first dielectric layer in contact with the first spacer, wherein a top surface of the first dielectric layer is higher than a top surface of the first spacer;
- and
- a second metal feature electrically connected to the first metal feature and in contact with a top surface and a sidewall of the first dielectric layer and the dielectric hard mask.
The device of claim I, wherein the second metal feature overlaps the first spacer.
A device, comprising:
- a substrate;
- a first interconnect structure over the substrate;
- first and second liners lining opposite sidewalk of the first interconnect structure, respectively;
- a second interconnect structure in contact with the first interconnect structure and the first liner;
- and
- a dielectric structure made of a continuous material and in contact with a top surface of the first interconnect structure and a sidewall of the second interconnect structure, and forming an interface with the second liner, wherein a top surface of the dielectric structure is higher than a top surface of the first liner.
A device, comprising:
- a substrate;
- a source/drain region over the substrate;
- a metal gate structure over the substrate and adjacent the source/drain region;
- a first conductive feature over the substrate and electrically connected to the source/drain region;
- first and second spacers on opposite sidewalls of the first conductive feature, respectively;
- a second conductive feature interfaced with a first partial region of the first conductive feature and the first spacer;
- a first dielectric protection layer interfaced with the first spacer and the second conductive feature, wherein the first dielectric protection layer forms a horizontal interface with a top surface of the first spacer:
- a second dielectric protection layer in contact with the second spacer, wherein the first dielectric protection layer and the second dielectric protection layer are spaced apart from each other in a cross-sectional view;
- and
- a dielectric hard mask interfaced with a second partial region of the first conductive feature.
Dependencies are inferred from the claim text.