Method of manufacturing semiconductor device
AssigneeSK hynix Inc.
InventorsDong Hun Lee, Jeong Hwan Kim, Mi Seong Park, Jung Shik Jang, Won Geun Choi
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Abstract
A method of manufacturing a semiconductor device is provided. The method may include forming a stack, forming a preliminary stepped structure by patterning the stack, forming a first stepped structure, a second stepped structure, and an opening located between the first stepped structure and the second stepped structure by etching the preliminary stepped structure, forming a passivation layer that fills the opening and covers the first stepped structure, and forming a third stepped structure by etching the second stepped structure using the passivation layer as an etching barrier.
Claims17
A method of manufacturing a semiconductor device, comprising:
- forming a stack;
- forming a preliminary stepped structure by patterning the stack;
- forming a first stepped structure, a second stepped structure, and an opening located between the first stepped structure and the second stepped structure by etching the preliminary stepped structure;
- forming a passivation layer that fills the opening and covers the first stepped structure;
- and
- forming a third stepped structure by etching the second stepped structure using the passivation layer as an etching barrier.
A method of manufacturing a semiconductor device, comprising:
- forming a stack including a first stepped structure and a second stepped structure;
- forming an opening that passes through the stack and defines a first sidewall including a sidewall of the first stepped structure, and a second sidewall including a sidewall of the second stepped structure;
- forming a passivation layer covering the first sidewall on the stack;
- and
- forming a third stepped structure by etching the second stepped structure using the passivation layer as an etching barrier.
Dependencies are inferred from the claim text.