Method for fabricating semiconductor interconnect structure and semiconductor structure thereof

A method for fabricating a semiconductor interconnect structure, comprising:

• providing a stacked structure comprising bonded a plurality of layers of wafer or die, wherein each layer of wafer or die comprises a substrate and a wiring layer, and the wiring layer comprises a plurality of metal wires;
• vertically forming, in the stacked structure, a first blind hole having a first diameter and a first length, wherein a penetration position of the first blind hole in each layer of wafer or die is between adjacent metal wires, the first diameter is less than a space between the adjacent metal wires, and the first length is less than a height of the stacked structure;
• forming a second blind hole having a second diameter and the first length coaxially with the first blind hole, wherein a sidewall of the second blind hole exposes end surfaces of the plurality of metal wires, and the second diameter is larger than the space between the adjacent metal wires;
• and
• filling a conductive material in the second blind hole.