Systems and methods for selective metal compound removal

An etching method comprising:

• forming a plasma of a treatment precursor comprising one or more of oxygen, hydrogen, or nitrogen to produce treatment plasma effluents;
• flowing the treatment plasma effluents into a substrate processing region of a semiconductor processing chamber;
• contacting a substrate housed in the substrate processing region with the treatment plasma effluents, wherein the substrate defines an exposed region of a tantalum or titanium material and an exposed region of a tungsten, cobalt, or copper;
• removing a carbon-containing material from a surface of the tantalum or titanium material;
• forming a plasma of a fluorine-containing precursor and a hydrogen-containing precursor, wherein the hydrogen-containing precursor is flowed at a rate relative to the fluorine-containing precursor of greater than or about 2:1;
• contacting the substrate with plasma effluents;
• removing the tantalum or titanium material;
• and
• subsequent to removing the tantalum or titanium material and prior to removing the substrate from the semiconductor processing chamber, contacting the substrate with a plasma comprising hydrogen, wherein the etching method is performed at a temperature greater than or about 500° C.

An etching method comprising:

• flowing a fluorine-containing precursor and a hydrogen-containing precursor into a remote plasma region of a semiconductor processing chamber, wherein the hydrogen-containing precursor is flowed at a flow rate of at least 2:1 relative to the flow rate of the fluorine-containing precursor;
• forming a plasma of the fluorine-containing precursor and the hydrogen-containing precursor to produce plasma effluents;
• flowing the plasma effluents into a substrate processing region housing a substrate, wherein the substrate comprises an exposed region of a tantalum or titanium material and an exposed region of a silicon-containing material;
• contacting the substrate with the plasma effluents;
• removing the tantalum or titanium material selectively to the silicon-containing material;
• forming a plasma of a treatment precursor comprising hydrogen to produce treatment plasma effluents;
• and
• contacting the substrate with the treatment plasma effluents, wherein the etching method is performed at a temperature greater than 500° C.