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US 11,769,669 B2Granted
Replacement metal gate device structure and method of manufacturing same
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., Tsmc Nanjing Company, Limited
InventorsMin Han Hsu, Jung-Chih Tsao
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Abstract
The semiconductor device includes a semiconductor fin, and a gate stack over the semiconductor fin. The gate stack includes a gate dielectric layer over a channel region of the semiconductor fin, a work function material layer over the gate dielectric layer, wherein the work function material layer includes dopants, and a gate electrode layer over the work function material layer. The gate dielectric layer is free of the dopants.
Claims20
A semiconductor device, comprising:
- a semiconductor fin;
- and
- a gate stack over the semiconductor fin, wherein the gate stack comprises:
- a gate dielectric layer over a channel region of the semiconductor fin,
- a work function material layer over the gate dielectric layer, wherein the work function material layer comprises dopants throughout an entirety of the work function material layer, the dopants comprise a hydrocarbon species comprising at least one of CH, CH2, or CH3, and a concentration of the dopants varies within the work function material layer, and
- a gate electrode layer over the work function material layer,
- wherein the gate dielectric layer is substantially free of the dopants.
4 more elements
A semiconductor device, comprising:
- a semiconductor fin protruding from a substrate;
- and
- a gate stack over the semiconductor fin, wherein the gate stack comprises:
- a gate dielectric layer over a channel region of the semiconductor fin,
- a work function material layer over the gate dielectric layer, wherein the work function material layer comprises a hydrocarbon-containing dopant, and the work function material layer has a concentration of the hydrocarbon-containing dopant ranging from about 0.5% to about 5% by weight, and
- a gate electrode layer over the work function material layer.
3 more elements
A semiconductor device, comprising:
- a semiconductor fin;
- and
- a gate stack over the semiconductor fin, wherein the gate stack comprises:
- a gate dielectric layer over a channel region of the semiconductor fin,
- a work function material layer over the gate dielectric layer, wherein the work function material layer comprises dopants, the dopant comprises oxygen and a hydrocarbon, and a dopant concentration in the work function layer ranges from about 0.5% by weight to about 5% by weight, and
- a gate electrode layer over the work function material.
3 more elements
Dependencies are inferred from the claim text.