P+ or N+ type doping process for semiconductors
AssigneeIstituto Nazionale Di Fisica Nucleare (Infn)
InventorsGianluigi Maggioni, Davide De Salvador, Daniel Ricardo Napoli, Enrico Napolitani
Life of this patent
Estimating the term…
Abstract
A p+ or n+ type doping process for semiconductors, allows to implement a semiconductor with a highly doped surface layer, and it comprises the steps of: providing a substrate made of semiconductor material; depositing on a surface of 5 the substrate made of semiconductor material a thin source layer made of dopant material acting as dopant source; depositing on said source layer an additional protective surface layer made of semiconductor material; inducing liquefaction of the surface layer at least until the source layer; and cooling down the substrate surface so as to obtain the diffusion of the dopant material.
Claims16
A doping process of p+ or n+ type for semiconductors, comprising:
- providing a substrate made of semiconductor material;
- depositing on a surface of the substrate made of semiconductor material a thin source layer made of dopant material acting as dopant source;
- depositing on said source layer an additional surface layer of semiconductor material;
- inducing liquefaction of the surface layer at least until the source layer, so as to obtain diffusion of the dopant material;
- cooling down the substrate surface, so as to obtain solidification of the semiconductor material with incorporation of the dopant itself.
Dependencies are inferred from the claim text.