Selective deposition of silicon using deposition-treat-etch process
AssigneeApplied Materials, Inc.
InventorsRui Cheng, Fei Wang, Abhijit Basu Mallick, Robert Jan Visser
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Abstract
Methods for selective silicon film deposition on a substrate comprising a first surface and a second surface are described. More specifically, the process of depositing a film, treating the film to change some film property and selectively etching the film from various surfaces of the substrate are described. The deposition, treatment and etching can be repeated to selectively deposit a film on one of the two substrate surfaces.
Claims20
A method of selectively depositing a film, the method comprising:
- exposing a substrate having a first surface and a second surface to a silane and a deposition plasma to deposit a silicon film on the first surface and the second surface, the silicon film on the first surface having a difference in crystallinity from the silicon film on the second surface, the silicon film having a thickness in a range of 5 Å to 100 Å;
- exposing the silicon film to a treatment plasma to increase the difference in crystallinity between the silicon film on the first surface and the second surface, the treatment plasma comprising plasmas of one or more of Ar, He, or H2;
- etching the film from the first surface and the second surface to remove substantially all of the film from the second surface and leave at least some of the silicon film on the first surface;
- and
- repeating the deposition, treatment and etching to form a film selectively on the first surface over the second surface.
A method of selectively depositing a film, the method comprising:
- exposing a substrate having a first surface consisting essentially of silicon and a second surface comprised of at least one different material to SiH4 and a hydrogen plasma to deposit a silicon film on the first surface and the second surface, the silicon film on the first surface having a difference in crystallinity from the silicon film on the second surface, the silicon film having a thickness in a range of 5 Å to 100 Å;
- exposing the silicon film to a treatment plasma to increase the difference in crystallinity between the silicon film on the first surface and the second surface, the treatment plasma comprising plasmas of one or more of Ar, He, or H2;
- etching the film from the first surface and the second surface with a thermal etch to remove substantially all of the film from the second surface and leave at least some of the silicon film on the first surface;
- and
- repeating the deposition, treatment and etching to form a film selectively on the first surface over the second surface.
A method of selectively depositing a film, the method comprising:
- exposing a substrate having a first surface consisting essentially of silicon and a second surface comprised of at least one different material to SiH4 and a hydrogen plasma to deposit a silicon film on the first surface and the second surface, the silicon film on the first surface having a difference in crystallinity from the silicon film on the second surface, the silicon film having a thickness in a range of 5 Å to 100 Å;
- exposing the silicon film to a treatment plasma to increase the difference in crystallinity between the silicon film on the first surface and the second surface, the treatment plasma comprising plasmas of one or more of Ar, He, or H2;
- etching the film from the first surface and the second surface with a plasma etch to remove substantially all of the film from the second surface and leave at least some of the silicon film on the first surface;
- and
- repeating the deposition, treatment and etching to form a film selectively on the first surface over the second surface.
Dependencies are inferred from the claim text.