Methods for depositing a hafnium lanthanum oxide film on a substrate by a cyclical deposition process in a reaction chamber

A method for depositing a hafnium lanthanum oxide film on a substrate by a cyclical deposition process in a reaction chamber, the method comprising:

• depositing a hafnium oxide film on the substrate utilizing at least one deposition cycle of a first sub-cycle of the cyclical deposition process, wherein the at least one deposition cycle of the first sub-cycle comprises:
• contacting the substrate with a hafnium vapor phase precursor;
• and
• contacting the substrate with a first oxidizer precursor consisting of water;
• depositing a lanthanum oxide film on the substrate utilizing at least one deposition cycle of a second sub-cycle of the cyclical deposition process, wherein the at least one deposition cycle of the second sub-cycle comprises:
• contacting the substrate with a lanthanum vapor phase precursor;
• and
• contacting the substrate with a second oxidizer precursor different from the first oxidizer precursor, wherein the second oxidizer precursor consists of molecular oxygen, and wherein the lanthanum vapor phase precursor and the hafnium vapor phase precursor each comprise a diketonate compound.