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US 11,769,630 B2Granted
Dielectric material, method of preparing the same, and device comprising the same
AssigneeSamsung Electronics Co., Ltd.
InventorsTaewon Jeong, Hyeon Cheol Park, Daejin Yang, Doh Won Jung, Giyoung Jo
Life of this patent
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Abstract
Provided are a dielectric material including a compound represented by Formula 1, a device including the same, and a method of preparing the dielectric material: (1−x)KaNabNbO3.xM(AcSbd)O3 [Formula 1] wherein, in Formula 1, M is a Group 2 element, A is a trivalent element, and 0<x<1, 0<a<1, 0<b<1, 0<c<1, 0<d<1, a+b=1, and c+d=1.
Claims39
A dielectric material comprising a compound represented by Formula 1:
- (1−x)KaNabNbO3.xM(AcSbd)O3 [Formula 1]
- wherein, in Formula 1, K is potassium, Na is sodium, Nb is niobium, Sb is antimony, O is oxygen,
- M is a Group 2 element,
- A is a trivalent element, and
- 0<x<1, 0<a<1, 0<b<1, 0<c<1, 0<d<1, a+b=1, and c+d=1.
2 more elements
A method of preparing a dielectric material, the method comprising:
- mechanically milling a mixture of potassium (K) salt, sodium (Na) salt, a niobium (Nb) compound, an M-containing compound, an A compound, and an antimony compound;
- and
- performing first heat treatment under an oxidizing atmosphere,
- wherein, the dielectric material comprises a compound represented by Formula 1,
- (1−x)KaNabNbO3-xM(AcSbd)O3 [Formula 1]
- wherein, in Formula 1, M is a Group 2 element,
- A is a trivalent element, and
- 0<a<1, 0<b<1, 0<c<1, 0<d<1, a+b=1, and c+d=1.
5 more elements
Dependencies are inferred from the claim text.