H-3 silicon carbide PN-type radioisotopic battery and manufacturing method of the same

An H-3 silicon carbide PN-type radioisotopic battery, comprising:

• an N-type conductive SiC substrate;
• an N-type SiC epitaxial layer;
• a P-type SiC epitaxial layer;
• a SiO2 passivation layer;
• a P-type SiC ohmic contact doped region;
• a P-type ohmic contact electrode;
• an N-type ohmic contact electrode;
• and
• an H-3 radioisotope source,
• wherein the N-type ohmic contact electrode is disposed under the substrate, the N-type SiC epitaxial layer is disposed on the substrate, the P-type SiC epitaxial layer is disposed on the N-type SiC epitaxial layer, the P-type SiC ohmic contact doped region and the SiO2 passivation layer are adjacent to each other and are both disposed on an upper surface of the P-type SiC epitaxial layer, the P-type ohmic contact electrode is disposed right above the P-type SiC ohmic contact doped region, and the H-3 radioisotope source is disposed right above the SiO2 passivation layer.