Giant spin hall-based compact neuromorphic cell optimized for differential read inference
AssigneeSamsung Electronics Co., Ltd.
InventorsTitash Rakshit, Ryan Hatcher, Jorge A. Kittl
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Abstract
A non-volatile data retention circuit includes a complementary latch configured to generate and store complementary non-volatile spin states corresponding to an input signal when in a write mode, and to concurrently generate a first charge current signal and a second charge current corresponding to the complementary non-volatile spin states when in read mode, and a differential amplifier coupled to the complementary latch and configured to generate an output signal based on the first and second charge current signals.
Claims9
A method of writing complementary charge states of a data retention circuit, the method comprising:
- receiving a first selection signal and a second selection signal, the first and second selection signals being indicative of a data write operation;
- and
- in response to receiving the first and second selection signals:
- receiving a charge current at an input of the data retention circuit;
- coupling, via a first transistor, a first end of a giant spin hall metal of a coupled giant spin hall latch to the input of the data retention circuit to receive the charge current from the input through the giant spin hall metal;
- coupling, via a second transistor, a second end of the giant spin hall metal to a pull down resistor coupled to ground, in response to the second selection signal;
- and
- generating and storing, by the coupled giant spin hall latch, complementary non-volatile spin states corresponding to the charge current in response to receiving the charge current from the input.
Dependencies are inferred from the claim text.