Reduced area standard cell abutment configurations

A semiconductor device comprising:

• a first modified cell block having a first modified vertical abutment region and a first modified horizontal abutment region, wherein the first modified vertical abutment region comprises a continuous active region along a first axis parallel to a vertical abutment edge;
• a second cell block having a second vertical abutment region, wherein the first modified cell block and the second cell block form a vertical abutment, and the first modified vertical abutment region is positioned directly adjacent the second vertical abutment region;
• and
• a third cell block having a second horizontal abutment region, wherein the first modified horizontal abutment region and the second horizontal abutment regions form a horizontal abutment arranged perpendicular to the vertical abutment, the horizontal abutment comprising a plurality of conductive elements arranged in parallel.

A semiconductor device comprising:

• a first modified cell block having a first modified vertical abutment region and a first modified horizontal abutment region,
• wherein the first modified vertical abutment region comprises a continuous active region along a first axis parallel to a vertical abutment edge;
• and
• wherein the first modified horizontal abutment region comprises a continuous active region along a second axis parallel to a horizontal abutment edge;
• a second cell block having a second vertical abutment region,
• wherein the first modified cell block and the second cell block are arranged to form a vertical abutment, and
• wherein the first modified vertical abutment region is positioned directly adjacent the second vertical abutment region, thereby reducing a total device area by a first area;
• and
• a third cell block having a second modified horizontal abutment region;
• wherein the first modified horizontal abutment region is positioned directly adjacent the second modified horizontal abutment region, thereby further reducing the total device area by a second area;
• and
• wherein the first modified horizontal abutment region and first horizontal abutment regions cooperate to form a combined horizontal abutment arranged perpendicular to the vertical abutment edge.