Protective film forming composition having a diol structure
AssigneeNissan Chemical Corporation
InventorsTakafumi Endo, Yasunobu Someya, Takahiro Kishioka
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Abstract
A protective film-forming composition which protects against a semiconductor wet etching solution, contains a solvent and a compound or polymer thereof containing at least one pair including two adjacent hydroxyl groups in a molecule thereof, and forms a protective film which can quickly be removed by dry etching and exhibits excellent resistance against a semiconductor wet etching solution during the lithographic process when producing semiconductors; a method for producing a resist pattern-equipped substrate which uses the protective film; and a method for producing a semiconductor device.
Claims9
A composition for forming a protective film against a wet etching liquid for semiconductor, the protective film forming composition comprising
- a solvent,
- a compound containing in the molecule thereof at least a pair of two hydroxy groups adjacent to each other, or a polymer thereof,
- a surfactant, and
- a crosslinking catalyst,
- wherein the compound has a molecular weight of from 300 or more to not more than 999, and has a partial structure represented by the following formula (1) or formula (2):
- wherein, in formula (1) and formula (2), each of R1, R2, and R3 represents a hydrogen atom, or an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 40 carbon atoms, each of the groups optionally being substituted, and R1 and R2 or R3 optionally together form a ring, and Z1 and Z2 represent a monovalent organic group.
Dependencies are inferred from the claim text.