Thin-film transistor (TFT) architecture for liquid crystal displays

A device, comprising:

• a substrate supporting a stack of layers, wherein the stack of layers defines:
• source conductors and pixel conductors at a first level;
• gate and common conductors at a second level;
• wherein the first level being between the second level and the substrate;
• semiconductor channels between the source conductors and pixel conductors;
• and
• one or more dielectric layers capacitively coupling the semiconductor channels to the gate conductors, wherein the common conductors are located higher in the stack than an uppermost dielectric layer of the one or more dielectric layers;
• and wherein the pixel conductors and common conductors are configured such that, in use, a change in potential difference between the pixel conductors and common conductors in a pixel region induces a change in one or more optical properties of a liquid crystal material in the pixel region, wherein the device comprises first and second conductor patterns at the first level, and wherein the first conductor pattern defines source conductor lines of the source conductors and the second conductor pattern defines the pixel conductors and extra parts of the source conductors between the source conductor lines and the semiconductor channels, and further wherein the extra parts are parts of the source conductors in closest proximity to the pixel conductors.