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US 11,767,609 B2Granted
Low-dislocation bulk GaN crystal and method of fabricating same
AssigneeSixPoint Materials, Inc.
InventorTadao Hashimoto
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Abstract
GaN wafers and bulk crystal have dislocation density approximately 1/10 of dislocation density of seed used to form the bulk crystal and wafers. Masks are formed selectively on GaN seed dislocations, and new GaN grown on the seed has fewer dislocations and often 1/10 or less of dislocations present in seed.
Claims15
A method of fabricating a GaN crystal in supercritical ammonia comprising
- (a) etching a nitrogen polar c-plane surface of a GaN seed crystal to selectively form pits at surface termination points of dislocations,
- (b) forming metal masks upon surfaces of the pits, wherein the step of forming the metal masks comprises
- (1) depositing metal powder particles on the nitrogen polar c-plane surface of the GaN seed crystal having pits,
- (2) removing an excess amount of the metal powder particles from the surface, thereby leaving a quantity of the metal powder particles in the pits, and
- (3) annealing the GaN seed with the metal powder particles to form metal masks in the pits, and
- (c) growing a GaN crystal on the GaN seed crystal and above the metal masks in supercritical ammonia.
3 more elements
Dependencies are inferred from the claim text.