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US 11,767,589 B2Granted
Substrate processing device
AssigneeASM IP Holding B.V.
InventorJaeMin Roh
Life of this patent
Estimating the term…
Abstract
A substrate processing device with improved exhaust efficiency and process reproducibility includes: a plurality of reactors; a plurality of exhaust ports in communication with the plurality of reactors and symmetrically arranged with respect to the reactors, respectively; and a plurality of exhaust channels in communication with the plurality of exhaust ports, wherein each exhaust channel includes a plurality of exhaust channels including a first channel extending in the first direction and a second channel extending in a second direction different from the first direction, wherein the plurality of exhaust channels extend through components supporting at least a portion of the plurality of reactors.
Claims14
A substrate processing device comprising:
- a reactor;
- a support portion configured to support at least a portion of the reactor;
- a first exhaust channel and a second exhaust channel in communication with a reaction space of the reactor;
- an exhaust space surrounding the reaction space;
- a first exhaust port between the exhaust space and the first exhaust channel;
- and
- a first sealing member between the first exhaust port and the support portion,
- wherein each of the first exhaust channel and the second exhaust channel extends to surround a portion of the reaction space, and
- wherein the first exhaust channel extends through a first portion of the support portion.
6 more elements
A substrate processing device comprising:
- a reactor;
- a support portion configured to support at least a portion of the reactor;
- a first exhaust channel and a second exhaust channel in communication with a reaction space of the reactor,
- an exhaust space surrounding the reaction space;
- a first exhaust port between the exhaust space and the first exhaust channel;
- a first lid arranged between the first exhaust port and the support portion, and
- the first exhaust channel extends between the first lid and the support portion
- wherein each of the first exhaust channel and the second exhaust channel extends to surround a portion of the reaction space, and
- wherein the first exhaust channel extends through a first portion of the support portion.
6 more elements
A substrate processing device comprising:
- a reactor;
- a support portion configured to support at least a portion of the reactor;
- and
- a first exhaust channel and a second exhaust channel in communication with a reaction space of the reactor,
- wherein each of the first exhaust channel and the second exhaust channel extends to surround a portion of the reaction space,
- wherein the first exhaust channel extends through a first portion of the support portion,
- wherein the second exhaust channel extends through a second portion of the support portion different from the first portion,
- wherein the support portion further comprises a joining point of the first exhaust channel and the second exhaust channel, and
- wherein the joining point is arranged at a corner of the support portion.
6 more elements
A substrate processing device comprising:
- a reactor;
- a support portion configured to support at least a portion of the reactor;
- and
- a first exhaust channel and a second exhaust channel in communication with a reaction space of the reactor;
- a partition below the support portion;
- and
- a transfer channel in communication with the first exhaust channel and the second exhaust channel, wherein the transfer channel extends through a portion of the partition;
- and
- a second lid arranged between the support portion and the partition,
- wherein each of the first exhaust channel and the second exhaust channel extends to surround a portion of the reaction space,
- wherein the first exhaust channel extends through a first portion of the support portion, and
- wherein the second exhaust channel extends through a second portion of the support portion different from the first portion.
9 more elements
A substrate processing device comprising:
- a first reactor;
- a second reactor;
- a support portion configured to support at least a portion of the first reactor and at least a portion of the second reactor;
- a first exhaust channel in communication with a first reaction space of the first reactor;
- a second exhaust channel in communication with the first reaction space of the first reactor;
- a third exhaust channel in communication with a second reaction space of the second reactor;
- and
- a fourth exhaust channel in communication with the second reaction space of the second reactor,
- wherein each of the first exhaust channel and the second exhaust channel extends to surround at least a portion of the first reaction space,
- each of the third exhaust channel and the fourth exhaust channel extends to surround at least a portion of the second reaction space
- wherein the first exhaust channel extends through a first portion of the support portion, the second exhaust channel extends through a second portion of the support portion, the third exhaust channel extends through a third portion of the support portion, and the fourth exhaust channel extends through a fourth portion of the support portion, and
- wherein the first exhaust channel and the second exhaust channel join at a first corner of the support portion, and the third exhaust channel and the fourth exhaust channel join at a second corner of the support portion.
9 more elements
Dependencies are inferred from the claim text.