Sputter target and method for producing a sputter target
AssigneePlansee Composite Materials GmbH
InventorsPeter Polcik, Szilard Kolozsvari, Paul Mayrhofer, Helmut Riedl
Life of this patent
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Abstract
A target for use in a physical vapor deposition process includes a matrix composed of a composite material selected from the group consisting of aluminum-based material, titanium-based material and chromium-based material and all combinations thereof. The matrix is doped with doping elements and the doping elements are embedded as constituents of ceramic compounds or aluminum alloys in the matrix. The doping elements are selected from the group of the lanthanides: La, Ce, Nb, Sm and Eu. A process for producing such a target and a use of such a target in a physical vapor deposition process are also provided.
Claims14
A target for a physical vapor deposition process, the target comprising:
- a matrix comprised of a composite material selected from the group consisting of aluminum-based material, titanium-based material, chromium-based material and all combinations of said materials;
- and
- doping elements doping said matrix, said doping elements being embedded as constituents of ceramic compounds in said matrix and said doping elements being selected from the group consisting of La, Ce, Nd, Sm and Eu,
- said doping elements being present in the target in a total concentration in a range from greater than or equal to 1 at % to less than or equal to 10 at %,
- said doping elements being homogeneously distributed in the target and configured to concentrate available impact energy of sputtering gas ions, and
- said elements of said matrix forming a proportion of greater than or equal to 60 at % and less than or equal to 99 at % of the target.
A target for a physical vapor deposition process, the target comprising:
- a matrix comprised of chromium-based material;
- and
- doping elements doping said matrix, said doping elements being embedded as constituents of ceramic compounds in said matrix and said doping elements being selected from the group consisting of La, Ce, Nd, Sm and Eu,
- said doping elements being homogeneously distributed in the target and being present in the target in a total concentration in a range from greater than or equal to 1 at % to less than or equal to 10 at %,
- said doping elements being homogeneously distributed in the target and configured to concentrate available energy, and
- said elements of said matrix forming a proportion of greater than or equal to 60 at % and less than or equal to 99 at % of the target.
Dependencies are inferred from the claim text.