Semiconductor MEMS structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYuan-Chih Hsieh, Hsing-Lien Lin, Jung-Huei Peng, Yi-Chien Wu
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Abstract
The present disclosure provides a structure. The structure comprises a cavity enclosed by a first substrate and a second substrate opposite to the first substrate. Further, the structure includes a feature in the cavity and the feature is protruded from a surface of the first substrate. In addition, the structure includes a dielectric layer over the feature, wherein the dielectric layer includes a first surface in contact with the feature and a second surface opposite to the first surface is positioned toward the cavity.
Claims20
A structure, comprising:
- a contiguous cavity enclosed by a first substrate and a second substrate opposite to the first substrate;
- a feature within the contiguous cavity, the feature protruding into the contiguous cavity to a top surface of the feature;
- and
- a dielectric layer over the top surface of the feature and in the contiguous cavity;
- and
- a self-assembled monolayer (SAM) over the dielectric layer and within the contiguous cavity, wherein the SAM provides a hydrophobic surface exposed within the contiguous cavity.
A semiconductor structure, comprising:
- a first substrate having a first region, a second region, and a third region of a top surface, wherein the second region is disposed between the first region and third region;
- a plurality of features over the first region and the third region of the top surface of the first substrate;
- a film wherein the film is patterned such that the film is disposed over a first subset of the plurality of features and not a second subset of the plurality of features, wherein the first subset of the plurality of features is disposed in the first region and the second subset of the plurality of features is disposed in the third region, and the second region of the top surface of the first substrate is free of the film;
- a self-assembled monolayer (SAM) over the film in the first region;
- and
- a cavity defined by the first substrate and a second substrate wherein the first region including the first subset of the plurality of features is within the cavity, the second region is within the cavity, and the third region including the second subset of the plurality of features is bonded to a second substrate and defines an edge of the cavity.
A semiconductor structure, comprising:
- a first substrate having a first conductive mesa and a second conductive mesa over the first substrate, wherein the first conductive mesa is spaced a lateral distance from and is coplanar with the second conductive mesa;
- a silicon containing layer over the first conductive mesa, wherein the silicon containing layer has a terminus edge in the lateral distance between the first conductive mesa and the second conductive mesa;
- and
- a second substrate bonded to the first substrate, wherein a top surface of the second conductive mesa is bonded to an element of the second substrate.
Dependencies are inferred from the claim text.