Magnetoelectric majority gate device
AssigneesBoard of Regents of the University of Nebraska, Board of Regents, The University of Texas System, Intel Corporation
InventorsNishtha Sharma Gaul, Andrew Marshall, Peter A. Dowben, Dmitri E. Nikonov
Life of this patent
Estimating the term…
Abstract
A magneto-electric (ME) majority gate device includes a conducting device and a plurality of ME transistors coupled to the conducting device. In one implementation, the plurality of ME transistors include a ME AND gate device with downward interface polarization, a ME-transmission gate device with downward interface polarization, and a ME-XNOR gate device. In another implementation, the plurality of ME transistors is five single-input ME-FETs.
Claims6
A magneto-electric (ME) majority gate device, comprising:
- a conducting device;
- and
- a plurality of ME transistors coupled to the conducting device, wherein the plurality of ME transistors is five single-input ME-FET devices, each ME-FET device having downward interface polarization.
A magneto-electric (ME) majority gate device, comprising:
- a conducting device;
- and
- a plurality of ME transistors coupled to the conducting device, wherein the plurality of ME transistors comprises:
- a ME AND gate device with downward interface polarization;
- a ME-transmission gate device with downward interface polarization;
- and
- a ME-XNOR gate device;
- wherein the ME AND gate device is coupled to a terminal of the conducting device,
- wherein the ME-transmission gate device is coupled to the terminal of the conducting device, and
- wherein the ME-XNOR gate device is coupled to the ME-transmission gate device.
Dependencies are inferred from the claim text.