μ-LED, μ-LED device, display and method for the same

A semiconductor structure, comprising:

• an n-doped first layer;
• a p-doped second layer doped with a first dopant;
• an active layer which is disposed between the n-doped first layer and the p-doped second layer and which comprises at least one quantum well;
• wherein the active layer of the semiconductor structure is divided into a plurality of first optically active regions, at least one second region and at least one third region;
• wherein said first plurality of optically active regions are spaced apart in a hexagonal pattern;
• wherein the at least one quantum well in the active layer comprises a larger band gap in the at least one second region than in the plurality of first optically active regions and the at least one third region;
• wherein the band gap is modified in particular by quantum well intermixing;
• wherein the at least one second region encloses the plurality of first optically active regions;
• and
• wherein said at least one third region is located in spaces between said plurality of first optically active regions.