Magnetoelectric XNOR logic gate device
AssigneesBoard of Regents of the University of Nebraska, Board of Regents, The University of Texas System, Intel Corporation
InventorsNishtha Sharma Gaul, Andrew Marshall, Peter A. Dowben, Dmitri E. Nikonov
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Abstract
A magneto-electric (ME) XNOR logic gate device includes a conducting device; and a ME-FET coupled to the conducting device. The ME-FET can be formed of a split gate; a first gate terminal coupled to a first portion of the split gate for receiving a first input signal; a second gate terminal coupled to a second portion of the split gate for receiving a second input signal; a source terminal coupled to a ground line; and a drain terminal coupled to the conducting device.
Claims5
A magneto-electric (ME) XNOR logic gate device, comprising:
- a conducting device;
- and
- a ME-FET coupled to the conducting device, wherein the ME-FET comprises:
- a split gate;
- a first gate terminal coupled to a first portion of the split gate for receiving a first input signal;
- a second gate terminal coupled to a second portion of the split gate for receiving a second input signal;
- a source terminal coupled to a ground line;
- and
- a drain terminal coupled to the conducting device.
Dependencies are inferred from the claim text.