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US 11,756,793 B2Granted
Semiconductor device manufacturing method
AssigneeHitachi High-Tech Corporation
InventorsYohei Ishii, Kathryn Maier, Medhat Khalil
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Abstract
A semiconductor device manufacturing method includes the steps of etching a semiconductor material by using plasma, forming a damage layer on the semiconductor material, and removing the damage layer such that a relatively low temperature process can form a fine pattern with a vertical cross section using a compound semiconductor material or the like.
Claims7
A semiconductor device manufacturing method comprising the steps of:
- etching a semiconductor material formed on a substrate to have a trapezoidal shape in a cross-section view using a plasma;
- forming a damage layer in an etched sidewall linear tapered portion of the semiconductor material which has the trapezoidal shape in the cross-section view, wherein the damage layer is formed on a surface of the substrate and does not extend into a material forming the substrate;
- and
- removing the damage layer.
1 more element
Dependencies are inferred from the claim text.