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US 11,754,928 B2Granted
Lithography exposure method with debris removing mechanism
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorHung-Jung Hsu
Life of this patent
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Abstract
A method for a lithography exposing process includes placing a reticle over a reticle stage, generating a light beam by irradiating a droplet by a laser, projecting a first portion of the light beam over a plurality of light permeable protrusions formed on a reflection layer and directing, by the protrusions and the reflection layer, the first portion of the light beam to the reticle.
Claims20
A method for a lithography exposing process, comprising:
- placing a reticle over a reticle stage;
- generating a light beam by irradiating a droplet by a laser;
- directing, by one or more optics, a first portion of the light beam to a plurality of light permeable protrusions formed on a reflection layer, wherein the light permeable protrusions are made of SiO2, and the reflection layer comprises a material different from SiO2;
- and
- directing, by the light permeable protrusions and the reflection layer, the first portion of the light beam to the reticle.
2 more elements
A method for a lithography exposing process, comprising:
- orienting a reticle such that a front surface of the reticle facing in a downward direction;
- generating a light beam by irradiating a droplet by laser of a lithography system, wherein the lithography system comprises a first inner chamber and a second inner chamber;
- directing, by a plurality of first optics in the first inner chamber, the light beam to the reticle, wherein a portion of the light beam is projected on a plurality of protrusions that are located on an outer sidewall of the second inner chamber positioned below the reticle, wherein the portion of the light beam is incident into the protrusions through a bouncing surface of each of the protrusions, and the bouncing surface of each of the protrusions faces in a direction that forms an acute angle with the downward direction;
- and
- directing, by a plurality of second optics in the second inner chamber, the portion of the light beam from the reticle to a wafer.
2 more elements
A method for a lithography exposing process, comprising:
- placing a reticle over a reticle stage;
- generating a light beam by irradiating a droplet by a laser;
- directing, by one or more first optics, the light beam to a light permeable protrusion on a reflection layer, wherein the light beam is incident into the light permeable protrusion and is reflected at an interface between the light permeable protrusion and the reflection layer while a debris of the light beam is reflected by a sidewall of the light permeable protrusion;
- directing, by the light permeable protrusion and the reflection layer, the light beam to the reticle;
- and
- directing, by one or more second optics in an inner chamber, the light beam from the reticle, through the inner chamber, to a wafer, wherein the light permeable protrusion and the reflection layer are fixed on an outer sidewall of the inner chamber.
3 more elements
Dependencies are inferred from the claim text.