Hetergenous integration and electro-optic modulation of III-nitride photonics on a silicon photonic platform

A photonic integrated circuit comprising:

• a silicon nitride waveguide;
• an electro-optic modulator formed of a III-nitride waveguide structure disposed on the silicon nitride waveguide, the III-nitride waveguide structure bonded to the silicon nitride waveguide with a III-nitride slab;
• a silicon dioxide layer disposed on a substrate, the silicon nitride waveguide disposed on the silicon dioxide layer beneath the III-nitride waveguide, the III-nitride slab supported above the silicon dioxide layer by the silicon nitride waveguide and by silicon nitride support layers disposed on the silicon dioxide layer and separated laterally from the silicon nitride waveguide in a direction perpendicular to a direction of light passage through the silicon nitride waveguide and III-nitride waveguide;
• a dielectric cladding covering the silicon nitride waveguide and electro-optic modulator;
• and
• electrical contacts disposed on the dielectric cladding and arranged to apply an electric field to the electro-optic modulator.