High radiation detection performance from photoactive semiconductor single crystals

A method for detecting incident radiation using

• a device for comprising:
• a photoactive single-crystalline semiconductor selected from Hg3Q2X2, where Q represents a chalcogen atom or a combination of chalcogen atoms and X represents a halogen atom or a combination of halogen atoms;
• Tl6BI4, wherein B is sulfur or selenium;
• and A2P2X6, where A represents Pb or Sn and X represents S or Se;
• at least one metal anode in electrical communication with the single-crystalline semiconductor, wherein the metal anode is selected from the group consisting of a gallium anode, a chromium anode, a titanium anode, an indium anode, an indium-calcium alloy anode, a lead anode, an aluminum anode, a magnesium anode, a hafnium anode, a bismuth anode and an anode comprising an alloy of two or more of gallium, chromium, titanium, indium, lead, aluminum, magnesium, hafnium anode, and bismuth;
• at least one metal cathode in electrical communication with the photoactive single-crystalline semiconductor, wherein the metal cathode is selected from a gold cathode, a platinum cathode, a nickel cathode, an osmium cathode, a palladium cathode, a selenium cathode, and an anode comprising two or more of gold, platinum, nickel, osmium, palladium, and selenium;
• a detector configured to measure a signal generated by electron-hole pairs that are formed when the material is exposed to incident gamma radiation and/or nuclear radiation, the method comprising:
• exposing the photoactive, single-crystalline semiconductor to incident gamma radiation and/or nuclear radiation, wherein the material absorbs the incident gamma radiation and/or nuclear radiation and electron-hole pairs are generated in the material;
• and
• measuring at least one of the energy or intensity of the absorbed incident gamma radiation by detecting the generated electrons, holes, or both.

A device for the detection of incident radiation comprising:

• single-crystalline CsPbX3, where X represents Br or Cl;
• a bismuth metal anode in electrical communication with the CsPbX3;
• at least one metal cathode in electrical communication with the CsPbX3, wherein the at least one metal cathode is selected from a gold cathode, a platinum cathode, a nickel cathode, an osmium cathode, a palladium cathode, a selenium cathode, and a cathode comprising two or more of gold, platinum, nickel, osmium, palladium, and selenium;
• wherein the anode and cathode are configured to apply an electric field across the material;
• and
• a detector configured to measure a signal generated by electron-hole pairs that are formed when the material is exposed to incident gamma radiation and/or nuclear radiation.