Back to results
US 11,749,487 B2Granted
Silicon-based vacuum transistors and integrated circuits
AssigneePurdue Research Foundation
InventorsSaeed Mohammadi, Shabnam Ghotbi
Life of this patent
Estimating the term…
Abstract
A field emitter array (FEA) vacuum transistor is disclosed which includes a substrate and a plurality of nanorods formed of a first polarity dopant on the substrate, wherein the dopant density is between about 1013 cm−3 to about 1015 cm−3.
Claims14
A field emitter array (FEA) vacuum transistor, comprising:
- a substrate;
- a plurality of nanorods formed of a first polarity dopant on the substrate;
- wherein the dopant density is between about 1013 cm−3 to about 1015 cm−3.
Dependencies are inferred from the claim text.