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US 11,746,121 B2Granted
Molybdenum compound and method of manufacturing integrated circuit device using the same
AssigneesSamsung Electronics Co., Ltd., Adeka Corporation
InventorsGyuhee Park, Younjoung Cho, Haruyoshi Sato, Kazuki Harano, Hiroyuki Uchiuzou
Life of this patent
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Abstract
A molybdenum compound and a method of manufacturing an integrated circuit device, the molybdenum compound being represented by the following General Formula (I):
Claims20
A molybdenum compound represented by the following General Formula (I):
- wherein R1, R2, R3, R4, R5, and R6 are each independently a C1 to C12 alkyl group, a C2 to C12 alkenyl group, a C2 to C12 alkynyl group, or a halogen atom.
A method of manufacturing an integrated circuit device, the method comprising forming a molybdenum-containing film on a substrate using a molybdenum compound represented by the following General Formula (I):
- wherein R1, R2, R3, R4, R5, and R6 are each independently a C1 to C12 alkyl group, a C2 to C12 alkenyl group, a C2 to C12 alkynyl group, or a halogen atom.
Dependencies are inferred from the claim text.