Nanocavity monolayer laser monolithically integrated with LED pump
AssigneeInternational Business Machines Corporation
InventorsJeehwan Kim, Ning Li, Devendra K. Sadana, Brent A. Wacaser
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Abstract
A laser structure including a Si or Ge substrate, a III-V buffer layer formed on the substrate, a light emitting diode (LED) formed on the buffer layer configured to produce visible light, a lens disposed on the LED to focus light from the LED, a photonic crystal layer formed on the LED to receive the light focused by the lens, and a monolayer semiconductor nanocavity laser formed on the photonic crystal layer for receiving light through the photonic crystal layer from the LED. The LED and the laser are formed monolithically and the LED acts as an optical pump for the laser.
Claims20
A laser structure including a monolithically formed nanocavity laser and light emitting diode (LED), comprising:
- a Si or Ge substrate;
- a III-V buffer layer formed on the substrate;
- a light emitting diode (LED) formed on the buffer layer configured to produce visible light;
- a lens disposed on the LED to focus light from the LED;
- a photonic crystal layer formed on the LED to receive the light focused by the lens;
- and
- a monolayer semiconductor nanocavity laser formed on the photonic crystal layer for receiving light through the photonic crystal layer from the LED, wherein the LED and the laser are formed monolithically and the LED acts as an optical pump for the laser.
A laser structure including a monolithically formed nanocavity laser and light emitting diode (LED), comprising:
- a substrate including silicon (Si) or germanium (Ge);
- a buffer layer including a III-V material and having a first surface formed on the substrate;
- a light emitting diode (LED) formed on a second surface of the buffer layer and configured to produce visible light;
- a lens disposed on the LED to focus the visible light to output focused light;
- a photonic crystal layer formed on the LED to receive the focused light;
- and
- a nanocavity laser formed on the photonic crystal layer, is a monolayer of a transition metal dichalcogenide having a chemical formula of MX2 for receiving the focused light through the photonic crystal layer to optically pump the nanocavity laser, where M is selected from the group consisting of:
- W and Mo and X is selected from the group consisting of:
- S, Se and Te;
- wherein the buffer layer further includes an interface material to reduce dislocation defects due to lattice mismatch between the substrate and the buffer layer.
Dependencies are inferred from the claim text.