Integration of photonic components on SOI platform
AssigneeRockley Photonics Limited
InventorsGuomin Yu, Aaron John Zilkie
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Abstract
An electro-optically active device comprising: a silicon on insulator (SOI) substrate including a silicon base layer, a buried oxide (BOX) layer on top of the silicon base layer, a silicon on insulator (SOI) layer on top of the BOX layer, and a substrate cavity which extends through the SOI layer, the BOX layer and into the silicon base layer, such that a base of the substrate cavity is formed by a portion of the silicon base layer; an electro-optically active waveguide including an electro-optically active stack within the substrate cavity; and a buffer region within the substrate cavity beneath the electro-optically active waveguide, the buffer region comprising a layer of Ge and a layer of GaAs.
Claims17
An electro-optically active device comprising:
- a silicon on insulator (SOI) substrate including a silicon base layer, a buried oxide (BOX) layer on top of the silicon base layer, a silicon on insulator (SOI) layer on top of the BOX layer, and a substrate cavity which extends through the SOI layer, the BOX layer and into the silicon base layer, such that a base of the substrate cavity is formed by a portion of the silicon base layer;
- an electro-optically active waveguide including an electro-optically active stack within the substrate cavity;
- and
- a buffer region within the substrate cavity beneath the electro-optically active waveguide, the buffer region comprising a layer of Ge,
- wherein the buffer region further comprises a layer of graded InAlAs.
An electro-optically active device comprising:
- a silicon on insulator (SOI) substrate including a silicon base layer, a buried oxide (BOX) layer on top of the silicon base layer, a silicon on insulator (SOI) layer on top of the BOX layer, and a substrate cavity which extends through the SOI layer, the BOX layer and into the silicon base layer, such that a base of the substrate cavity is formed by a portion of the silicon base layer;
- an electro-optically active waveguide including an electro-optically active stack within the substrate cavity;
- a buffer region within the substrate cavity beneath the electro-optically active waveguide, the buffer region comprising a layer of Ge;
- and
- a channel between the electro-optically active stack and a sidewall of the substrate cavity,
- wherein the channel is filled with a liner and a filling material with a refractive index similar to or greater than that of a material forming a sidewall of the substrate cavity to thereby form a bridge-waveguide in the channel between the SOI layer and the electro-optically active stack.
An electro-optically active device comprising:
- a silicon on insulator (SOI) substrate including a silicon base layer, a buried oxide (BOX) layer on top of the silicon base layer, a silicon on insulator (SOI) layer on top of the BOX layer, and a substrate cavity which extends through the SOI layer, the BOX layer and into the silicon base layer, such that a base of the substrate cavity is formed by a portion of the silicon base layer;
- an electro-optically active waveguide including an electro-optically active stack within the substrate cavity;
- and
- a buffer region within the substrate cavity beneath the electro-optically active waveguide, the buffer region comprising a layer of Ge,
- wherein a top surface of the electro-optically active stack is positioned higher than a top surface of the SOI layer such that a portion of the electro-optically active stack protrudes from the substrate cavity.
An electro-optically active device comprising:
- a silicon on insulator (SOI) substrate including a silicon base layer, a buried oxide (BOX) layer on top of the silicon base layer, a silicon on insulator (SOI) layer on top of the BOX layer, and a substrate cavity which extends through the SOI layer, the BOX layer and into the silicon base layer, such that a base of the substrate cavity is formed by a portion of the silicon base layer;
- an electro-optically active waveguide including an electro-optically active stack within the substrate cavity;
- a buffer region within the substrate cavity beneath the electro-optically active waveguide, the buffer region comprising a layer of Ge;
- a first electrode contact on a first doped region, the first doped region forming a lowest layer of the electro-optically active stack;
- an isolation cavity in the first doped region;
- an insulating material located on a side surface of the electro-optically active stack and extending into the isolation cavity in the first doped region and lining the isolation cavity;
- and
- a second electrode contact on a second doped region, the second doped region forming a top layer of the electro-optically active stack, the second electrode contact extending from the second doped region along the insulating material and into the isolation cavity in the first doped region.
Dependencies are inferred from the claim text.