Passivation against vapor deposition
AssigneeASM IP Holding B.V.
InventorsVarun Sharma, Eva E. Tois
Life of this patent
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Abstract
Passivation layers to inhibit vapor deposition can be used on reactor surfaces to minimize deposits while depositing on a substrate housed therein, or on particular substrate surfaces, such as metallic surfaces on semiconductor substrates to facilitate selective deposition on adjacent dielectric surfaces. Passivation agents that are smaller than typical self-assembled monolayer precursors can have hydrophobic or non-reactive ends and facilitate more dense passivation layers more quickly than self-assembled monolayers, particularly over complex three-dimensional structures.
Claims20
A method for vapor-phase coating, the method comprising:
- passivating a first surface against vapor-phase deposition, wherein the passivating comprises exposing the first surface to a passivating agent comprising a halogen to form a passivated first surface;
- and
- selectively depositing a dielectric layer on a second surface relative to the passivated first surface by exposing both the passivated first surface and the second surface to vapor-phase deposition reactants, wherein the second surface has a different composition than the first surface.
A method for vapor-phase coating, the method comprising:
- passivating a first surface against vapor-phase deposition to form a passivated first surface;
- and
- selectively depositing a dielectric layer on a second surface relative to the passivated first surface by exposing both the passivated first surface and the second surface to vapor-phase deposition reactants, wherein the second surface has a different composition than the first surface, and wherein the dielectric layer comprises a material selected from the group consisting of a metal nitride, zirconium oxide, and hafnium oxide.
Dependencies are inferred from the claim text.