Solid-state imaging device having optical black region, method of manufacturing the same, and electronic apparatus
AssigneeSony Group Corporation
InventorsKazufumi Watanabe, Yasushi Maruyama
Life of this patent
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Abstract
A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.
Claims20
A light detecting device, comprising:
- a semiconductor substrate including a first side as a light incident side and a second side opposite to the first side;
- photoelectric conversion regions disposed in the semiconductor substrate;
- an element isolation region disposed in the semiconductor substrate,
- wherein the photoelectric conversion regions are separated by the element isolation region, and
- wherein the element isolation region includes a p-type semiconductor region;
- a wiring layer disposed under the second side of the semiconductor substrate;
- and
- a metal film disposed above the first side of the semiconductor substrate,
- wherein the metal film contacts the p-type semiconductor region in an optical black level region disposed in the semiconductor substrate.
An electronic apparatus, comprising:
- an optical lens;
- a signal processing circuit;
- and
- a light detecting device including:
- a semiconductor substrate including a first side as a light incident side and a second side opposite to the first side;
- photoelectric conversion regions disposed in the semiconductor substrate;
- an element isolation region disposed in the semiconductor substrate,
- wherein the photoelectric conversion regions are separated by the element isolation region, and
- wherein the element isolation region includes a p-type semiconductor region;
- a wiring layer disposed under the second side of the semiconductor substrate;
- and
- a metal film disposed above the first side of the semiconductor substrate,
- wherein the metal film contacts the p-type semiconductor region in an optical black level region disposed in the semiconductor substrate.
Dependencies are inferred from the claim text.