US 11,733,287 B2Granted

Device and method for testing semiconductor devices

AssigneeInnoscience (Zhuhai) Technology Co., Ltd.

InventorsJihua Li, Tao Zhang, Wenjie Lin

Life of this patent

Estimating the term…

Loading patent…

Abstract

A testing circuit includes a first circuit and a second circuit. The first circuit and second circuit have a first capacitor and a second capacitor. The first circuit is connected to a first transistor. The second circuit is connected to a second transistor. A first inductor has a first terminal connected to an input of the testing circuit and a second terminal connected to a source of the second transistor. A first diode has an anode connected to ground and a cathode connected to the second terminal of the first inductor. The second capacitor has a first terminal connected to a drain of the second transistor and a second terminal connected to ground. The first capacitor has a first terminal connected to the input of the testing circuit and a second terminal connected to ground.

Claims20

Dependent claims

A testing circuit, comprising:

a first circuit having a first capacitor and a second capacitor, the first circuit configured to transfer at least a portion of a first voltage across the first capacitor to the second capacitor;
and
a second circuit having the first capacitor and the second capacitor, the second circuit configured to transfer at least a portion of a second voltage across the second capacitor to the first capacitor, wherein
the first circuit is connected to a first transistor;
the first transistor has a gate configured to receive a first pulse signal;
the portion of the first voltage is transferred from the first capacitor to the second capacitor during a period of the first pulse signal;
the second circuit is connected to a second transistor;
the second transistor has a gate configured to receive a second pulse signal;
and
the portion of the second voltage is transferred from the second capacitor to the first capacitor during a period of the second pulse signal;
wherein the second circuit further comprises:
a first inductor having a first terminal connected to an input of the testing circuit and a second terminal connected to a source of the second transistor;
and
a first diode having an anode connected to ground and a cathode connected to the second terminal of the first inductor,
wherein the second capacitor has a first terminal connected to a drain of the second transistor and a second terminal connected to ground, and
wherein the first capacitor has a first terminal connected to the input of the testing circuit and a second terminal connected to ground.

13 more elements

A testing circuit, comprising:

a first circuit having a first capacitor and a second capacitor, the first circuit configured to transfer at least a portion of a first voltage across the first capacitor to the second capacitor, wherein the first circuit is connected to a first transistor;
and
a second circuit having the first capacitor and the second capacitor, the second circuit configured to transfer at least a portion of a second voltage across the second capacitor to the first capacitor, wherein the second circuit is connected to a second transistor and wherein the second circuit further comprises:
a first inductor having a first terminal connected to an input of the testing circuit and a second terminal connected to a source of the second transistor;
and
a first diode having an anode connected to ground and a cathode connected to the second terminal of the first inductor,
wherein the second capacitor has a first terminal connected to a drain of the second transistor and a second terminal connected to ground, and
wherein the first capacitor has a first terminal connected to the input of the testing circuit and a second terminal connected to ground.

5 more elements

A testing circuit, comprising:

a first circuit having a first capacitor and a second capacitor, the first circuit configured to transfer at least a portion of a first voltage across the first capacitor to the second capacitor, wherein the first circuit is connected to a first transistor to be tested;
a second circuit having the first capacitor and the second capacitor, the second circuit configured to transfer at least a portion of a second voltage across the second capacitor to the first capacitor, wherein the second circuit is connected to a second transistor to be tested;
a first inductor having a first terminal connected to an input of the testing circuit and a second terminal connected to a drain of the first transistor;
and
a first diode having an anode connected to the second terminal of the first inductor and a cathode connected to a first terminal of the second capacitor,
wherein the second capacitor has a second terminal connected to ground,
wherein the first capacitor has a first terminal connected to the input of the testing circuit and a second terminal connected to ground, and
wherein the first transistor has a source connected to ground.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/887,529Filed 15 Aug 2022 · continuation
Published: US 2022/0043048 A18 Dec 2022
Granted: 22 Aug 2023
Term ends: Not estimatedThe source records don’t support an estimate.

Classification6 codes

G01R 31/2601
Testing of individual semiconductor devices: apparatus or methods therefor
G01R 31/2623
For testing field effect transistors, i.e. FET's: for measuring break-down voltage therefor
G01R 31/2617
For testing bipolar transistors: for measuring switching properties thereof
G01R 31/2633
For testing diodes: for measuring switching properties thereof

Family

PCT/CN2020/107412Parent of this continuation · filed 6 Aug 2020
US 2022/0390502 A1Pre-grant publication · published 8 Dec 2022
Application16/981,704Parent of this continuation
US 11,448,685 B2Parent of this continuation
US 2022/0043048 A1Published application
US 11,733,287 B2This patent

From the US filing history. Foreign family members aren’t listed.