Device and method for analyzing a defect of a photolithographic mask or of a wafer
AssigneeCarl Zeiss SMT GmbH
InventorsGabriel Baralia, Christof Baur, Klaus Edinger, Thorsten Hofmann, Michael Budach
Life of this patent
Estimating the term…
Abstract
The present application relates to a scanning probe microscope comprising a probe arrangement for analyzing at least one defect of a photolithographic mask or of a wafer, wherein the scanning probe microscope comprises: (a) at least one first probe embodied to analyze the at least one defect; (b) means for producing at least one mark, by use of which the position of the at least one defect is indicated on the mask or on the wafer; and (c) wherein the mark is embodied in such a way that it may be detected by a scanning particle beam microscope.
Claims32
A method for analyzing at least one defect of a photolithographic mask or of a wafer using a measuring system, the measuring system comprising at least one scanning probe microscope and at least one scanning particle beam microscope, the method comprising:
- a. analyzing the at least one defect using at least one probe of the at least one scanning probe microscope, wherein analyzing the at least one defect comprises determining topography data of the at least one defect;
- b. producing at least one mark on the photolithographic mask or on the wafer using the at least one scanning probe microscope, wherein the at least one mark is embodied in a way that it can be detected by at least one particle beam of the at least one scanning particle beam microscope;
- and
- c. detecting the at least one mark using the at least one particle beam of the at least one scanning particle beam microscope.
A measuring system for analyzing at least one defect of a photolithographic mask or of a wafer comprising:
- a. at least one scanning probe microscope having a probe arrangement, wherein the probe arrangement comprises at least one first probe embodied to analyze the at least one defect, wherein analyzing the at least one defect comprises determining topography data of the at least one defect;
- b. the at least one scanning probe microscope having means for producing at least one mark, by use of which a position of the at least one defect on the photolithographic mask or on the wafer is indicated;
- and
- c. at least one scanning particle beam microscope embodied to detect the at least one mark.
A method for analyzing at least one defect of a photolithographic mask or of a wafer, the method comprising:
- a. analyzing the at least one defect using at least one scanning probe microscope;
- b. producing at least one mark on the photolithographic mask or on the wafer using the at least one scanning probe microscope, wherein the at least one mark is embodied in a way that it can be detected by at least one scanning particle beam microscope;
- and
- c. detecting the at least one mark using at least one particle beam of the at least one scanning particle beam microscope.
Dependencies are inferred from the claim text.