Method for estimating twin defect density
AssigneeThe Industry & Academic Cooperation in Chungnam National University (IAC)
InventorsSoon-ku Hong, Si Trong Ngo, Duy Duc Le, Jungkuk Lee
Life of this patent
Estimating the term…
Abstract
Disclosed is a method for estimating twin defect density in a single-crystal sample, including: (A) etching the observed surface of a single crystal to form etch pits; (B) selecting bar-shaped etch pits caused by twin defect; (C) from the long-axis direction lengths of the etch pits caused by twin defect, estimating the twin defect density by using the following equation: twin defect density=Σkx′i/area of sample, wherein 2≤k≤3, and x′i is the long-axis direction length of an etch pit caused by the i-th twin.
Claims10
A method of evaluating a twin defect density of a single crystal sample, comprising steps of:
- (A) forming etch pits by etching an observation surface of a single crystal;
- (B) selecting an etch pit according to a twin defect;
- and
- (C) evaluating a twin defect density using an equation below from a long-axis direction length of the etch pit according to the twin defect,
- wherein the twin defect density=Σkx′i/the area of the sample, and
- wherein 2≤k≤≤3, x′i is the long-axis direction length of the etch pit based on an i-th twin defect.
Dependencies are inferred from the claim text.