Semiconductor device with a supporting member and bonded metal layers

A semiconductor device comprising:

• a supporting member having a supporting surface facing in a thickness direction;
• a conductive member having an obverse surface facing a same side as the supporting surface faces in the thickness direction, and a reverse surface opposite to the obverse surface, the conductive member being bonded to the supporting member such that the reverse surface faces the supporting surface;
• a semiconductor element bonded to the obverse surface;
• and
• a first metal layer covering at least a part of the supporting surface, and a second metal layer covering the reverse surface,
• wherein the first metal layer and the second metal layer are bonded to each other,
• the supporting member is an insulating plate,
• the conductive member includes a first wiring layer having the obverse surface, a second wiring layer having the reverse surface, and a base layer provided between the first wiring layer and the second wiring layer and containing carbon, and
• the base layer is thicker than the supporting member.

A semiconductor device comprising:

• a supporting member having a supporting surface facing in a thickness direction;
• a conductive member having an obverse surface facing a same side as the supporting surface faces in the thickness direction, and a reverse surface opposite to the obverse surface, the conductive member being bonded to the supporting member such that the reverse surface faces the supporting surface;
• a semiconductor element bonded to the obverse surface;
• a first metal layer covering at least a part of the supporting surface, and a second metal layer covering the reverse surface;
• a strip-shaped metal lead or a plurality of wires electrically connected to an obverse surface electrode of the semiconductor element;
• a sealing resin;
• an additional conductive member having an obverse surface and a reverse surface;
• and
• an additional semiconductor element bonded to the obverse surface of the additional conductive member,
• wherein the first metal layer and the second metal layer are bonded to each other by solid phase diffusion,
• the additional conductive member is bonded to the supporting member such that the reverse surface of the additional conductive member faces the supporting surface,
• the semiconductor element is a MOSFET made of a semiconductor material mainly composed of silicon carbide,
• the semiconductor element has a first surface and a second surface respectively facing opposite to each other in the thickness direction,
• a source current runs on the first surface,
• a drain current runs on the second surface, and
• the second surface is conductively connected to the obverse surface of the conductive member.