Magnetoresistive effect element
AssigneeTDK Corporation
InventorsTsuyoshi Suzuki, Shinto Ichikawa, Katsuyuki Nakada
Life of this patent
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Abstract
A magnetoresistive effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer, wherein a crystal structure of the non-magnetic layer is a spinel structure, wherein the non-magnetic layer contains Mg, Al, X, and O as elements constituting the spinel structure, and wherein the X is at least one or more elements selected from a group consisting of Ti, Pt, and W.
Claims19
A magnetoresistive effect element comprising:
- a first ferromagnetic layer;
- a second ferromagnetic layer;
- and
- a non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer,
- wherein a crystal structure of the non-magnetic layer is a spinel structure,
- wherein the non-magnetic layer contains Mg, Al, X, and O as elements constituting the spinel structure,
- wherein the X is at least one or more elements selected from a group consisting of Ti, Pt, and W,
- wherein a crystal structure of the non-magnetic layer is a reverse spinel structure, and
- wherein a crystal space group is Imma or P4I22.
A magnetoresistive effect element comprising:
- a first ferromagnetic layer;
- a second ferromagnetic layer;
- and
- a non-magnetic layer located between the first ferromagnetic layer and the seam ferromagnetic layer,
- wherein a crystal structure of the non-magnetic layer is a spinel structure,
- wherein the non-magnetic layer contains Mg, Al, X, and O as elements constituting the spinel structure,
- wherein the X is at least one or more elements selected from a group consisting of Ti, Pt, and W, and
- wherein the concentration of the X at the center of the non-magnetic layer in a lamination direction is higher than the average concentration of the X of the non-magnetic layer.
A magnetoresisitive effect element comprising:
- a first ferromagnetic layer;
- a second ferromagnetic layer;
- and
- non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer,
- wherein a crystal structure of the non-magnetic layer is a spinel structure,
- wherein the non-magnetic layer contains Mg, Al, X, and O as elements constituting the spinel structure, and
- wherein the X is W.
Dependencies are inferred from the claim text.